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savantic semiconductor product specification silicon npn power transistors 2SC3873 d escription with to-3pfa package high v c bo high speed switching good linearity of h fe wide area of safe operation applications for high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 12 a i cm collector current-peak 22 a i b base current 5 a t c =25 100 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3873 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma;i b =0 400 v v cesat collector-emitter saturation voltage i c =7a ;i b =1.4a 1.0 v v besat base-emitter saturation voltage i c =7a ;i b =1.4a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =0.1a ; v ce =5v 15 h fe-2 dc current gain i c =7a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v 30 mhz switching times t on turn-on time 0.7 s t stg storage time 2.0 s t f fall time i c =7a; v cc =150v i b1 =1.4a;i b2 =-2.8a 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3873 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm)

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